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| Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP50N06 APPLICATIONSL Low Voltage high-Speed Switching. TO-220 ABSOLUTE MAXIMUM RATINGS T stg Tj PD VDSS VGSS ID Storage Temperature - - - - - - - - - - Operating Junction Temperature Allowable Power Dissipation Tc=25ae(c) Drain-Source Voltage - - Gate-Source Voltage - - - - - - Drain Current Tc=25ae(c) - Ta=25ae(c) -55~175ae 150ae 130W 60V 1D G 2D D 3D S 20V 50A ELECTRICAL CHARACTERISTICS Symbol Characteristics Ta=25ae(c) Min Typ Max Unit Test Conditions BVDSS IDSS IGSS VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Is VSD Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate -Source Leakage Current 60 1 A 2.0 880 430 110 60 185 75 60 39 9.5 13 50 1.5 1.15 ae V |I A nA V pF pF pF nS nS nS nS nC nC nC ID=250|I A ,VGS=0V VGS=0 VDS = 60V Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Rise Time Turn - Off Delay Time 100 4.0 1140 560 140 130 380 160 130 45 VGS=A 20V , VDS =0V VDS = VGS , ID =250|I A VGS=10V, ID =25A VDS =25V, VGS=0,f=1MHz 0.018 0.023 VDD =30V, ID =25A RG= 50 | * VDS =48V VGS=10V ID=50A* IS =50A , VGS=0 Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Continuous Source Current A V /W Diode Forward Voltage Thermal Resistance Rth j-c(c) Junction-to-Case *Pulse Test Pulse WidthU 300|I s Duty CycleU 2% Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP50N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP50N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP50N06 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFP50N06 |
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